Title :
Quantitative model for epitaxial-transistor collector characteristics
Author :
Hahn, L.A. ; Ashley, K.L.
Author_Institution :
Texas Instruments Inc., Dallas, USA
Abstract :
A 1-dimensional transistor model is presented which characterises the variation of collector resistance with two parameters. The mode assumes that lifetime varies inversely with injection level. Calculated collector characteristics and hFE against collector-current curves are compared with experimental results.
Keywords :
bipolar transistors; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700339
