• DocumentCode
    909634
  • Title

    Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors

  • Author

    Stiff-Roberts, A.D. ; Su, X.H. ; Chakrabarti, S. ; Bhattacharya, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    16
  • Issue
    3
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    867
  • Lastpage
    869
  • Abstract
    A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).
  • Keywords
    III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor device models; semiconductor quantum dots; thermionic emission; tunnelling; 0 to 3 V; 78 to 295 K; InAs-GaAs; InAs-GaAs quantum dot infrared photodetectors; applied bias; dark current; field-assisted tunneling emission; infrared detectors; quantum dots; thermionic emission; Current measurement; Dark current; Electrons; Infrared detectors; Photodetectors; Quantum dots; Temperature distribution; Thermionic emission; Tunneling; US Department of Transportation;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2004.823690
  • Filename
    1269822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909634