Title :
Contribution of field-assisted tunneling emission to dark current in InAs-GaAs quantum dot infrared photodetectors
Author :
Stiff-Roberts, A.D. ; Su, X.H. ; Chakrabarti, S. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
A model for the dark current in quantum dot infrared photodetectors, including thermionic emission and field-assisted tunneling, is developed. The calculated dark currents are in excellent agreement with measured values for a wide range of temperatures (78 K-295 K) and applied bias (0-3 V).
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor device models; semiconductor quantum dots; thermionic emission; tunnelling; 0 to 3 V; 78 to 295 K; InAs-GaAs; InAs-GaAs quantum dot infrared photodetectors; applied bias; dark current; field-assisted tunneling emission; infrared detectors; quantum dots; thermionic emission; Current measurement; Dark current; Electrons; Infrared detectors; Photodetectors; Quantum dots; Temperature distribution; Thermionic emission; Tunneling; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.823690
