• DocumentCode
    909684
  • Title

    Further Measurements of Induced Radioactivities in Silicon and Germanium Irradiated with High-Energy Heavy Ions

  • Author

    Sakai, Eiji

  • Author_Institution
    Japan Atomic Energy Research Institute Tokaimura, Nakagun, Ibarakiken, 319-11, Japan
  • Volume
    33
  • Issue
    1
  • fYear
    1986
  • Firstpage
    651
  • Lastpage
    654
  • Abstract
    The results of further measurements of gamma-ray spectra from silicon and germanium irradiated with high-energy heavy ions are described to add data to those reported in IEEE Trans. Nucl. Sci., Vol. NS-31, No. 1, pp. 316 - 319(1984). The heavy ions are 70 MeV 10B4+, 100 MeV 12C5+ 120 MeV 16O7+, 120 MeV 19F7+, 150 MeV 28Si9+, 165 MeV 32S10+, 180 MeV 63Cull+, 90 MeV 76Br6+, 150 MeV 115In10+, 170 MeV 197Au13+ and 195 MeV 209Bi14+ accelerated by JAERI Tandem Accelerator. Residual gamma-ray-emitting nuclides, their radioactivities and the numbers of atoms per incident ion produced are listed.
  • Keywords
    Annealing; Atomic measurements; Detectors; Energy measurement; Germanium; Heating; Ion accelerators; Ion implantation; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4337186
  • Filename
    4337186