DocumentCode :
909684
Title :
Further Measurements of Induced Radioactivities in Silicon and Germanium Irradiated with High-Energy Heavy Ions
Author :
Sakai, Eiji
Author_Institution :
Japan Atomic Energy Research Institute Tokaimura, Nakagun, Ibarakiken, 319-11, Japan
Volume :
33
Issue :
1
fYear :
1986
Firstpage :
651
Lastpage :
654
Abstract :
The results of further measurements of gamma-ray spectra from silicon and germanium irradiated with high-energy heavy ions are described to add data to those reported in IEEE Trans. Nucl. Sci., Vol. NS-31, No. 1, pp. 316 - 319(1984). The heavy ions are 70 MeV 10B4+, 100 MeV 12C5+ 120 MeV 16O7+, 120 MeV 19F7+, 150 MeV 28Si9+, 165 MeV 32S10+, 180 MeV 63Cull+, 90 MeV 76Br6+, 150 MeV 115In10+, 170 MeV 197Au13+ and 195 MeV 209Bi14+ accelerated by JAERI Tandem Accelerator. Residual gamma-ray-emitting nuclides, their radioactivities and the numbers of atoms per incident ion produced are listed.
Keywords :
Annealing; Atomic measurements; Detectors; Energy measurement; Germanium; Heating; Ion accelerators; Ion implantation; Semiconductor materials; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1986.4337186
Filename :
4337186
Link To Document :
بازگشت