Title :
Method of measuring mobility of majority carriers in silicon devices
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
A method is described for measuring the mobility of majority carriers in a silicon layer bounded by a depletion region. Only standard measurements of capacitance and conductance have to be done. No other quantities, such as the concentration of the carriers, need be known.
Keywords :
electron mobility; semiconductor device testing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700350
