Novel dynamic random access memory cell using three diodes

A new dynamic random access memory cell, which incorporates three diodes in a composite structure, is proposed and investigated. In the 3-diode memory cell, one diode serves as a storage capacitor and the others serve as switches. The cell requires only three interconnect lines and can be fabricated with standard bipolar technology. The write, read, and standby operations of the cell are analysed and simulated.