Title :
Third-Harmonic Power Extraction From InP Gunn Devices up to 455 GHz
Author :
Eisele, Heribert
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds
fDate :
6/1/2009 12:00:00 AM
Abstract :
InP Gunn devices with graded doping profiles were evaluated for third-harmonic power extraction above 400 GHz in a configuration with a tapered output waveguide that cuts off both fundamental and second-harmonic frequencies of the oscillator. The best devices generated RF output powers of 283 muW at 412 GHz and 203 muW at 429 GHz. The highest third-harmonic frequency observed was 455 GHz at an output power of 23 muW .
Keywords :
Gunn devices; doping profiles; optical harmonic generation; RF output powers; doping profiles; frequency 412 GHz; frequency 429 GHz; frequency 455 GHz; gunn devices; oscillator; power 203 muW; power 23 muW; power 283 muW; second-harmonic frequency; tapered output waveguide; third-harmonic frequency; third-harmonic power extraction; Gunn devices; millimeter-wave devices; millimeter-wave generation; millimeter-wave oscillators; oscillator noise; phase noise; power combining; submillimeter-wave devices; submillimeter-wave generation; submillimeter-wave oscillators;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2020044
