Field-emission-controlled transit-time negative resistance

Field emission from a Schottky contact on an n+¿n¿n++ semiconductor is proposed for carrier injection into a space-charge region to produce a negative transit-time resistance in the microwave range. Field-emission transit-time diodes are considered to behave linearly up to amplitude saturation, to exhibit low-noise performance, and to be capable of very high frequencies (1010¿1012 Hz).