Title :
Poly-Silicon Based Latching RF MEMS Switch
Author :
Nordquist, Christopher D. ; Baker, Michael S. ; Kraus, Garth M. ; Czaplewski, David A. ; Patrizi, Gary A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
fDate :
6/1/2009 12:00:00 AM
Abstract :
A latching RF MEMS switch has been fabricated in a multi-user polysilicon surface micromachining process. The switch uses 5 V, 35 mA thermal actuation for < 500 mus to toggle between states and a compliant bistable latching mechanism to hold the state in the absence of applied bias. The switch, including probe pads, measures 1 mm2 and has <0.4 dB insertion loss, >25 dB return loss, and >75 dB isolation at 1 GHz. The switch has potential applications in low duty-cycle, low power RF tuning and switching applications.
Keywords :
circuit tuning; elemental semiconductors; low-power electronics; micromachining; microswitches; silicon; RF MEMS switch; Si; bistable latching mechanism; current 35 mA; frequency 1 GHz; insertion loss; low power RF tuning; polysilicon-based latching; return loss; surface micromachining process; switching application; voltage 5 V; Contacts; microelectromechanical devices; silicon; switches;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2009.2020025
