DocumentCode :
910005
Title :
The effects of BJT self-heating on circuit behavior
Author :
Fox, Robert M. ; Lee, Sang-Gug ; Zweidinger, David T.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume :
28
Issue :
6
fYear :
1993
fDate :
6/1/1993 12:00:00 AM
Firstpage :
678
Lastpage :
685
Abstract :
This study demonstrates the circuit and device conditions under which self-heating can significantly affect bipolar junction transistor (BJT) circuit behavior. Simple quantitative measures are supplied that allow estimation of thermally induced errors in BJT small-signal parameters, based on knowledge of the transistor geometry and its Early voltage. It is shown that errors in output admittance and reverse transadmittance can be significant without much power dissipation, especially when the base and emitter driving impedances are small. Other small-signal parameters are less affected unless the power dissipation becomes significant. Thermal effects in large-signal DC analysis can be significant in precision analog circuits that depend on close transistor matching; such circuits can also exhibit long settling-time tails due to long thermal time constants. ECL (emitter-coupled logic) delay is shown to be insensitive to self-heating. These effects are demonstrated through simulations of a variety of circuits using versions of SPICE modified to include physics-based models for thermal impedance
Keywords :
bipolar transistor circuits; bipolar transistors; semiconductor device models; thermal analysis; transient response; BJT self-heating; BJT small-signal parameters; ECL delay; Early voltage; SPICE; bipolar junction transistor; circuit behavior; device conditions; emitter-coupled logic; large signal thermal effects; large-signal DC analysis; output admittance; physics-based models; power dissipation; reverse transadmittance; simulations; thermal impedance; thermally induced errors; transistor geometry; Admittance; Analog circuits; Bipolar transistor circuits; Delay; Geometry; Impedance; Logic; Power dissipation; Probability distribution; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.217983
Filename :
217983
Link To Document :
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