20 GHz Wavelet Generator Using a Gated Tunnel Diode

Author

Egard, M. ; Ärlelid, M. ; Lind, E. ; Astromskas, G. ; Wernersson, L.-E.

Author_Institution

Dept. of Solid State Phys., Lund Univ., Lund

Volume

19

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

386

Lastpage

388

Abstract

We demonstrate the use of a GaAs-AlGaAs gated tunnel diode (GTD) in an ultra-wideband (UWB) wavelet generator. An inductor is integrated to form an oscillator circuit, which is driven by the negative differential conductance property of a GTD. It is demonstrated that as the gate tunes the magnitude of the output conductance, the oscillator may be switched on and off, creating short RF pulses. The shortest pulses generated are 500 ps long, the highest output power for the free running oscillator is -4.1 dBm, and the highest oscillation frequency is 22 GHz. Analytical expressions based on the van der Pol equation describing the pulse length and amplitude are presented. This technique is applicable for high frequency impulse radio UWB implementations.

Keywords

III-V semiconductors; aluminium compounds; electric admittance; gallium arsenide; oscillators; pulse generators; resonant tunnelling; tunnel diodes; ultra wideband communication; wavelet transforms; GaAs-AlGaAs; free running oscillator; frequency 20 GHz; frequency 22 GHz; gated tunnel diode; high frequency impulse radio UWB; inductor; negative differential conductance property; oscillator circuit; output conductance; ultra-wideband wavelet generator; van der Pol equation; Impulse radio (IR); oscillator; pulse generator; resonant tunneling transistor; ultra-wideband (UWB); wavelet generator;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2020029

Filename

4967880