Title :
Electron beam luminescence of SnO2
Author :
Kawasaki, B.S. ; Garside, B.K. ; Shewchun, J.
Abstract :
Electron beam experiments on SnO2show that it is an indirect transition semiconductor with an energy gap of approximately 2.6 eV. Spectral and output intensity curves are presented. These indicate a very broad wavelength emission and no gain in the material.
Keywords :
Conducting materials; Crystals; Current density; Electron beams; Laser excitation; Luminescence; Optical films; Optical materials; Optical pumping; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7583
