1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform

Author

Qimeng Jiang ; Cheng Liu ; Yunyou Lu ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

357

Lastpage

359

Abstract

We demonstrate high-voltage depletion-mode and enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs) on a GaN-on-silicon-on-insulator (SOI) platform. The GaN-on-SOI wafer features GaN epilayers grown by metal-organic chemical vapor deposition on a p-type (111) Si SOI substrate with a p-type (100) Si handle wafer. Micro-Raman spectroscopy significantly reveals reduced stress in the GaN epilayers, which is a result expected from the compliant SOI substrate. E-mode HEMTs fabricated by fluorine plasma implantation technique deliver high on/off current ratio (10⁸-10⁹), large breakdown voltage (1471 V with floating substrate), and low on-resistance (3.92 mΩ·cm²).

Keywords

III-V semiconductors; MOCVD; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; silicon-on-insulator; wide band gap semiconductors; AlGaN-GaN; E-mode HEMT; GaN epilayer; GaN-on-SOI platform; Si SOI substrate; enhancement-mode; high-electron-mobility transistor; high-voltage depletion-mode; metal-organic chemical vapor deposition; microRaman spectroscopy; plasma implantation technique; silicon-on-insulator; voltage 1.4 kV; voltage 1471 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Silicon; Substrates; AlGaN/GaN high-electron-mobility transistors (HEMTs); GaN-on-silicon-on-insulator (SOI); enhancement-mode (E-mode); fluorine plasma ion implantation; high voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2236637

Filename

6410335