• DocumentCode
    910261
  • Title

    Piezoelectric effect in CdSe field-effect transistors

  • Author

    Jacobs, J.E. ; Reimann, K.J.

  • Volume
    58
  • Issue
    2
  • fYear
    1970
  • Firstpage
    246
  • Lastpage
    247
  • Abstract
    The strain-induced variation of the CdSe TFT characteristics was measured. The experimental and theoretical values of the generated piezoelectric voltage agree within 25 percent. The strain sensitivity of the fabricated devices was in the order of 8000 volts per unit strain.
  • Keywords
    Aluminum; Capacitive sensors; Electrodes; FETs; Insulation; Piezoelectric effect; Piezoelectric films; Thin film transistors; Vacuum breakdown; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7596
  • Filename
    1449526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=910261