Title :
A self-scanned image sensor employing MOS structure
Author :
Ando, Takehiro ; Ishihara, Yoshiyuki ; Akahoshi, Tomoyuki
Abstract :
Studies were carried out on a self-scanned image sensor comprising a linear integrated-circuit array of photodiodes and metal-oxide-semiconductor (MOS) transistors. It was found that the maximum scanning rate is about 2.5×105bits/s, and that the value is mainly restricted by the photo-induced current and the junction capacitance of the photodiode.
Keywords :
Capacitance; Delay; Equivalent circuits; Image sensors; Optical devices; Optical sensors; Photodiodes; Sensor arrays; Solid state circuits; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7597
