Measurements of dg/dN and dn/dN and their dependence on photon energy in Â¿ =1.5Âµm InGaAsP laser diodes

Author

Westbrook, L.D.

Author_Institution

British Telecom, BT Research Laboratories, Ipswich, UK

Volume

133

Issue

2

fYear

1986

fDate

4/1/1986 12:00:00 AM

Firstpage

135

Lastpage

142

Abstract

The first measurements of the dispersion of dg/dN and dn/dN, the variation in the gain and refractive index with injected carrier concentration, are reported for Â¿ = 1.5 Âµm InGaAsP laser diodes. Particular attention has been paid to the accurate evaluation of the injected carrier concentration N through the direct measurement of the carrier lifetime coupled with the use of the ridge-waveguide laser structure, which benefits from real-index lateral waveguiding, together with low parallel leakage currents and low parasitic capacitance. The values of dg/dN and dn/dN, at the lasing wavelength, were determined to be 2.7 Ã— 10Â¿16cm2 and Â¿ 1.8 Ã— 10Â¿20cm3respectively.

Keywords

III-V semiconductors; carrier density; carrier lifetime; gain measurement; gallium arsenide; gallium compounds; indium compounds; laser transitions; laser variables measurement; refractive index; semiconductor junction lasers; 1.5 microns; III-V semiconductors; InGaAsP laser diodes; carrier lifetime; gain; injected carrier concentration; leakage currents; parasitic capacitance; photon energy; real-index lateral waveguiding; refractive index; ridge-waveguide laser structure;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

DOI

10.1049/ip-j:19860022

Filename

4644156