Title :
Measurements of dg/dN and dn/dN and their dependence on photon energy in ¿ =1.5µm InGaAsP laser diodes
Author_Institution :
British Telecom, BT Research Laboratories, Ipswich, UK
fDate :
4/1/1986 12:00:00 AM
Abstract :
The first measurements of the dispersion of dg/dN and dn/dN, the variation in the gain and refractive index with injected carrier concentration, are reported for ¿ = 1.5 µm InGaAsP laser diodes. Particular attention has been paid to the accurate evaluation of the injected carrier concentration N through the direct measurement of the carrier lifetime coupled with the use of the ridge-waveguide laser structure, which benefits from real-index lateral waveguiding, together with low parallel leakage currents and low parasitic capacitance. The values of dg/dN and dn/dN, at the lasing wavelength, were determined to be 2.7 × 10¿16cm2 and ¿ 1.8 × 10¿20cm3respectively.
Keywords :
III-V semiconductors; carrier density; carrier lifetime; gain measurement; gallium arsenide; gallium compounds; indium compounds; laser transitions; laser variables measurement; refractive index; semiconductor junction lasers; 1.5 microns; III-V semiconductors; InGaAsP laser diodes; carrier lifetime; gain; injected carrier concentration; leakage currents; parasitic capacitance; photon energy; real-index lateral waveguiding; refractive index; ridge-waveguide laser structure;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j:19860022
