Title :
Cryogenic microwave performance of 0.5- mu m InGaAs MESFET´s
Author :
Maranowski, S. ; Laskar, J. ; Feng, Milton ; Kolodzey, Jomes
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
Microwave and DC properties of 0.5- mu m InGaAs MESFETs were measured at 300 and 125 K. The authors have measured approximately 30% increases in RF g/sub m mod ext/ and f/sub T/ when cooling from 300 to 125 K. The authors also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.5 micron; 125 K; 300 K; DC properties; InGaAs; MESFETs; RF properties; cryogenic microwave performance; cutoff frequency; gate bias; gate built-in voltage; gate characteristic; gate leakage currents; microwave properties; semiconductors; transconductance; Cryogenics; Current measurement; FETs; Indium gallium arsenide; MESFETs; Microwave measurements; Radio frequency; Substrates; Temperature; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
