DocumentCode :
910299
Title :
Cryogenic microwave performance of 0.5- mu m InGaAs MESFET´s
Author :
Maranowski, S. ; Laskar, J. ; Feng, Milton ; Kolodzey, Jomes
Author_Institution :
Illinois Univ., Urbana, IL, USA
Volume :
13
Issue :
1
fYear :
1992
Firstpage :
64
Lastpage :
66
Abstract :
Microwave and DC properties of 0.5- mu m InGaAs MESFETs were measured at 300 and 125 K. The authors have measured approximately 30% increases in RF g/sub m mod ext/ and f/sub T/ when cooling from 300 to 125 K. The authors also observe a 0.06-V increase in gate built-in voltage at 125 K that results in smaller gate leakage currents. The improved gate characteristic at 125 K leads to better RF properties at higher gate bias.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.5 micron; 125 K; 300 K; DC properties; InGaAs; MESFETs; RF properties; cryogenic microwave performance; cutoff frequency; gate bias; gate built-in voltage; gate characteristic; gate leakage currents; microwave properties; semiconductors; transconductance; Cryogenics; Current measurement; FETs; Indium gallium arsenide; MESFETs; Microwave measurements; Radio frequency; Substrates; Temperature; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.144953
Filename :
144953
Link To Document :
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