Title :
Dual-mode behavior of silicon heterostructure switches with third-terminal control
Author :
Ali, N.T. ; Green, Roger J.
Author_Institution :
EIMC Unit, Bradford Univ., UK
fDate :
10/1/1995 12:00:00 AM
Abstract :
The performance of three-terminal silicon heterostructure switches is examined. Different types of third terminal injection are considered. The device is seen to operate in both avalanche and punch-through modes under particular circumstances. The criterion for punch-through operation is developed.
Keywords :
avalanche diodes; elemental semiconductors; semiconductor heterojunctions; semiconductor switches; silicon; Si; avalanche mode; dual-mode behavior; heterostructure switches; punch-through mode; third-terminal control; three-terminal switches; Charge carrier density; Charge carrier processes; Current density; Doping; Electrons; Permittivity; Silicon; Switches; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
