Title :
Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)
fDate :
6/1/1975 12:00:00 AM
Abstract :
Johnson´s high-frequency representation theory for MOSFET´s, experimentally confirmed by Hopkins up to 1 GHz, is extended in this short paper for SBFET´s and is found to substantially agree with data for 1-mu m- and 1/2-mu m-gate GaAs SBFET´s up to 12 GHz. Regenerative-feedback conductance not accounted for by conventional models is seen to be present in SBFET´s at microwave frequencies.
Keywords :
Admittance; Capacitors; Contact resistance; Equivalent circuits; FETs; MOSFET circuits; Microwave frequencies; Microwave transistors; Negative feedback; Parasitic capacitance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1975.1128607
