The improvement of DC performance in AlGaN-GaN HFETs with isoelectronic Al-doped channels

Author

Jeon, Chang Min ; Lee, Jae-Hoon ; Lee, Jung-Hee ; Lee, Jong-Lam

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Kyungbuk, South Korea

Volume

25

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

120

Lastpage

122

Abstract

Enhancement of electrical properties of an AlGaN-GaN heterostructure was achieved through isoelectronic Al-doping of the undoped channel layer during the growth by metal-organic chemical vapor deposition. The two-dimensional electron gas mobility was increased from 3390 to 4870 cm²/V·s at 77 K, and the crystal quality was significantly improved as Al atoms were incorporated in the undoped GaN film. The AlGaN-GaN HFETs were fabricated on this material structure and exhibited a maximum drain current of 909 mA/mm, and a maximum transconductance of 232 mS/mm, corresponding to an increase of 30% and 21%, respectively.

Keywords

III-V semiconductors; aluminium compounds; electron gas; electron mobility; gallium compounds; high electron mobility transistors; nitrogen compounds; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; 2-D electron gas mobility; AlGaN-GaN; DC performance; HEFTs; crystal quality; drain current; electrical properties; heterostructure; isoelectronic aluminium-doped channels; metal-organic chemical vapor deposition; transconductance; Aluminum gallium nitride; Buffer layers; Chemical vapor deposition; Crystallization; Gallium nitride; HEMTs; MODFETs; Materials science and technology; Semiconductor device doping; X-ray diffraction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.824246

Filename

1269896