DocumentCode
910550
Title
Modelling the DC characteristics of VMOS power transistors for computer-aided design
Author
Abuelm¿¿atti, M.T.
Author_Institution
Gulf Polytechnic, Department of Electrical Engineering and Computer Science, Isa Town, Bahrain
Volume
133
Issue
4
fYear
1986
fDate
8/1/1986 12:00:00 AM
Firstpage
161
Lastpage
162
Abstract
A mathematical formula is presented for the current-voltage characteristic of the VMOS power transistor. The two parameters of this model can be easily extracted from different regions in the device characteristics. By using this formula, the implementation of a new VMOS power transistor model into the source code of circuit-simulation programs, such as SPICE, is feasible.
Keywords
circuit CAD; insulated gate field effect transistors; power transistors; semiconductor device models; DC characteristics; SPICE; VMOS power transistors; circuit-simulation programs; computer-aided design; current-voltage characteristic; electronic engineering computing;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1986.0030
Filename
4644181
Link To Document