Title :
CW silicon TRAPATT operation
Author :
Evans, W.J. ; Iglesias, D.E.
Abstract :
Silicon IMPATT diodes operating in the TRAPATT mode have generated more than 6 watts of CW power with an efficiency of 26 percent. The oscillator circuit used in the experiment is similar to that used for the CW germanium TRAPATT oscillations reported earlier and operates at a frequency of 520 MHz. The diode heat sink is cooled with liquid nitrogen.
Keywords :
Admittance; Computer networks; Diodes; Frequency; Germanium; Poles and zeros; Silicon; Testing; Transfer functions; Yttrium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7625
