• DocumentCode
    910559
  • Title

    Effect of emitter oxide-window-edge shape in computer-simulation studies of ion-implanted transistors

  • Author

    Henderson, J.C. ; Scarbrough, R.J.D. ; Silvester, R.

  • Author_Institution
    Post Office, Research Department, London, UK
  • Volume
    6
  • Issue
    19
  • fYear
    1970
  • Firstpage
    623
  • Lastpage
    625
  • Abstract
    A method is proposed for modelling 2-dimensional doping profiles in hybrid ion-implanted high-frequency transistors, and the possibility of emitter-collector `pipe¿ formation at emitter window edges in narrow-basewidth structures is discussed. An extension of the model to `pushed-out¿ double-diffused structures is proposed.
  • Keywords
    semiconductor device models; semiconductor doping; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700433
  • Filename
    4234935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=910559