Title :
Effect of emitter oxide-window-edge shape in computer-simulation studies of ion-implanted transistors
Author :
Henderson, J.C. ; Scarbrough, R.J.D. ; Silvester, R.
Author_Institution :
Post Office, Research Department, London, UK
Abstract :
A method is proposed for modelling 2-dimensional doping profiles in hybrid ion-implanted high-frequency transistors, and the possibility of emitter-collector `pipe¿ formation at emitter window edges in narrow-basewidth structures is discussed. An extension of the model to `pushed-out¿ double-diffused structures is proposed.
Keywords :
semiconductor device models; semiconductor doping; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700433
