Title :
Pixelless imaging device using optical up-converter
Author :
Luo, H. ; Ban, D. ; Liu, H.C. ; Poole, P.J. ; Buchanan, M.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
3/1/2004 12:00:00 AM
Abstract :
A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 μm optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 μm, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.
Keywords :
CCD image sensors; III-V semiconductors; arsenic compounds; epitaxial growth; gallium compounds; image convertors; indium compounds; light emitting diodes; optical wavelength conversion; p-i-n photodiodes; phosphorus compounds; photodetectors; 1 micron; 1.5 micron; InGaAs-InP; InGaAsP-InP; epitaxially growth; integrated PIN photodetector; light-emitting diode; optical radiation; optical up-converter; optical wavelength conversion; p-i-n detector; photocurrent; pixelless imaging device; silicon charge coupled device; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Optical design; Optical devices; Optical imaging; Optical wavelength conversion; Photoconductivity; Photodetectors; Pixel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.824245
