Title :
Al2O3-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
Author :
Yu, D.S. ; Huang, C.H. ; Chin, Albert ; Zhu, Chunxiang ; Li, M.F. ; Cho, Byung Jin ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electron. Eng., Nat. ChiaoTung Univ., Taiwan, Taiwan
fDate :
3/1/2004 12:00:00 AM
Abstract :
High-κ Al2O3/Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the Al2O3-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al2O3-Si MOSFETs. Additionally, Al2O3-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al2O3-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.
Keywords :
MOSFET; alumina; electron mobility; germanium; germanium alloys; hole mobility; leakage currents; nickel alloys; rapid thermal annealing; semiconductor device metallisation; silicon alloys; 500 C; Al2O3-Ge-on-insulator; NiGe; NiSi; crystallization; dual gates; electron mobility; equivalent-oxide-thickness; gate leakage current; high-k MOSFET; high-k material; hole mobility; interfacial reactions; metallic gates; n-MOSFETs; oxygen penetration; p-MOSFETs; rapid thermal annealing; Charge carrier processes; Crystalline materials; Crystallization; Effective mass; Electron mobility; Inorganic materials; Leakage current; MOSFET circuits; Rapid thermal annealing; Rapid thermal processing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.824249
