Variable inductance multilayer inductor with MOSFET switch control

Author

Piljae Park ; Cheon Soo Kim ; Mun Yang Park ; Sung Do Kim ; Hyun Kyu Yu

Author_Institution

Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

25

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

144

Lastpage

146

Abstract

A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 μm, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).

Keywords

CMOS integrated circuits; MOSFET; field effect transistor switches; inductors; radiofrequency integrated circuits; 0.18 micron; 2.4 GHz; CMOS process; MOSFET switch control; electrically controllable matching circuits; multiband RF circuits; multilayer inductor; one-poly-six-metal; stacked spiral inductor; variable inductance; variable monolithic inductor; voltage control; wide tuning range voltage controlled oscillators; CMOS process; Inductance; Inductors; MOSFET circuits; Nonhomogeneous media; Process control; Radio frequency; Spirals; Switches; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.822670

Filename

1269904