Title :
Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface
Author :
Cheng, Zhiyuan ; Pitera, Arthur J. ; Lee, Minjoo L. ; Jung, Jongwan ; HOyt, Judy L. ; Antoniadis, Dimitri A. ; Fitzgerald, Eugene A.
Author_Institution :
Microsystem Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; hole mobility; interface states; silicon-on-insulator; BOX interface; bonded SGOI substrates; bonded-SiGe-on-insulator; device performance; electron mobility; fully depleted strained-SOI; hole mobility; n-MOSFETs; p-MOSFETs; wafer bonding; Charge carrier processes; Germanium silicon alloys; Insulation; Laboratories; MOSFET circuits; Oxidation; Semiconductor materials; Silicon germanium; Substrates; Wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.823057
