Title :
Negative differential output conductance of self heated power MOSFETs
Author :
Barlow, P.S. ; Davis, R.G. ; Lazarus, M.J.
Author_Institution :
University of Lancaster, Department of Physics, Lancaster, UK
fDate :
10/1/1986 12:00:00 AM
Abstract :
Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed.
Keywords :
insulated gate field effect transistors; negative resistance; power transistors; semiconductor device models; continuous operational curves; mathematical model; negative differential output conductance; power MOSFETs; pulsed operational curves;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0036
