Title :
Characteristics of the epitaxial semiconductor raman laser
Author :
Suto, K. ; Nishizawa, J.
Author_Institution :
Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
fDate :
8/1/1986 12:00:00 AM
Abstract :
An epitaxial semiconductor Raman laser with a directly reflection coated resonator structure instead of external mirrors is reported. Also, the modulation of a semiconductor Raman laser by carrier injection from the pn-junction formed on the active layer, and the amplifying experiment of the Raman laser are reported.
Keywords :
III-V semiconductors; Raman lasers; gallium compounds; laser cavity resonators; liquid phase epitaxial growth; optical modulation; semiconductor growth; solid lasers; GaP crystal; III-V semiconductors; carrier injection; directly reflection coated resonator structure; epitaxial semiconductor Raman laser; liquid phase epitaxy; modulation; pn-junction;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1986.0042
