• DocumentCode
    910991
  • Title

    Effect of depletion-layer capacitance on lifetime measurements of p+-n-n+ diodes

  • Author

    Venkateswaran, K. ; Roulston, D.J.

  • Author_Institution
    University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
  • Volume
    6
  • Issue
    21
  • fYear
    1970
  • Firstpage
    681
  • Lastpage
    683
  • Abstract
    It is shown that the low-level minority-carrier lifetime in p+-n-n+ diodes obtained by measuring the stored charge can be in error owing to the charging of the depletion-layer capacitance. A simple method is described for eliminating the error due to this charge.
  • Keywords
    electric variables measurement; measurement; semiconductor diodes; space charge; depletion layer capacitance; error eliminating; minority carrier lifetime measurement; p+-n-n+ diode; stored charge measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700474
  • Filename
    4234978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=910991