Title :
Effect of depletion-layer capacitance on lifetime measurements of p+-n-n+ diodes
Author :
Venkateswaran, K. ; Roulston, D.J.
Author_Institution :
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Abstract :
It is shown that the low-level minority-carrier lifetime in p+-n-n+ diodes obtained by measuring the stored charge can be in error owing to the charging of the depletion-layer capacitance. A simple method is described for eliminating the error due to this charge.
Keywords :
electric variables measurement; measurement; semiconductor diodes; space charge; depletion layer capacitance; error eliminating; minority carrier lifetime measurement; p+-n-n+ diode; stored charge measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700474
