Title :
Plasma deposition of geo2/sio2 and si3n4 waveguides for integrated optics
Author :
Nourshargh, N. ; Starr, E.M. ; McCormack, J.S.
Author_Institution :
GEC Research Ltd., Hirst Research Centre, Wembley, UK
fDate :
8/1/1986 12:00:00 AM
Abstract :
A plasma activated chemical vapour deposition (CVD) technique is described for fabricating doped silica optical waveguides on silica substrates. Planar, germania-doped, silica waveguides have been fabricated with less than 0.3 dB/cm attenuation at ¿¿ = 0.633 ¿¿/m. The deposition technique has also been used for fabricating GeO2 and Si3N4 waveguides.
Keywords :
chemical vapour deposition; germanium compounds; integrated optics; optical waveguides; optical workshop techniques; plasma deposition; silicon compounds; 0.633 microns; Si3N4 waveguides; SiO2:GeO2 waveguides; integrated optics; plasma activated chemical vapour deposition;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1986.0043
