Title :
Accurate bias dependent linear model for bipolar transistors up to 6 GHz
Author :
Kumar, K. Bharath ; Krishnapur, R. ; Mondal, T.B.
Author_Institution :
Indian Institute of Technology, Kharagpur, India
fDate :
12/1/1986 12:00:00 AM
Abstract :
A multilump linear model giving good agreement between measured and simulated 2-port parameters in the frequency range 0.5¿6 GHz and collector currents up to 20 mA is given. The collector current dependence of intrinsic elements of the model is determined.
Keywords :
bipolar transistors; semiconductor device models; solid-state microwave devices; 0.5 to 6 GHz; 2-port parameters; 20 mA; bias dependent linear model; bipolar transistors; collector currents; multilump linear model;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1986.0045
