• DocumentCode
    911341
  • Title

    Parametric Analysis of Spin-Polarized VCSELs

  • Author

    Alexandropoulos, Dimitris ; Adams, Michael J.

  • Author_Institution
    Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK
  • Volume
    45
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    744
  • Lastpage
    749
  • Abstract
    Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.
  • Keywords
    III-V semiconductors; birefringence; carrier lifetime; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical control; optical pumping; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; Elliot-Yafet process; GaInNAs; VCSEL; birefringence; electron lifetime; optical pumping; polarization control; semiconductor quantum well; spin relaxation; spin-polarized electron; steady-state rate equation; vertical-cavity surface-emitting laser; Electrons; Laser stability; Laser theory; Optical polarization; Optical pumping; Quantum well lasers; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Vertical cavity surface emitting lasers; Polarization; quantum theory; semiconductor lasers; semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2013107
  • Filename
    4967996