Title :
Parametric Analysis of Spin-Polarized VCSELs
Author :
Alexandropoulos, Dimitris ; Adams, Michael J.
Author_Institution :
Sch. of Comput. Sci. & Electron. Eng., Univ. of Essex, Colchester, UK
fDate :
6/1/2009 12:00:00 AM
Abstract :
Calculations of spin-injected vertical-cavity surface-emitting lasers (VCSELs) are presented using an efficient algorithm for solution of the steady-state rate equations in the spin-flip model. The effects of spin relaxation, birefringence, electron and photon lifetimes, linewidth factor, and the magnitude and ellipticity of the pumping are investigated. After a review of published values for spin relaxation rates in semiconductors of interest for VCSELs, the dependence of spin relaxation times in GaInNAs quantum wells on N content and well width is calculated for the Elliot-Yafet process. The results, which show good agreement with experiment, are used in simulations of spin-injected GaInNAs VCSELs to determine the dependence of polarization control on well width.
Keywords :
III-V semiconductors; birefringence; carrier lifetime; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical control; optical pumping; semiconductor lasers; semiconductor quantum wells; surface emitting lasers; Elliot-Yafet process; GaInNAs; VCSEL; birefringence; electron lifetime; optical pumping; polarization control; semiconductor quantum well; spin relaxation; spin-polarized electron; steady-state rate equation; vertical-cavity surface-emitting laser; Electrons; Laser stability; Laser theory; Optical polarization; Optical pumping; Quantum well lasers; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Vertical cavity surface emitting lasers; Polarization; quantum theory; semiconductor lasers; semiconductor materials;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2013107
