Modeling of nonhyperbolic sine I-V characteristics in poly-Si resistors

Poly-Si resistors with an unimplanted channel region (and with n-type source/drain regions) can exhibit a nonhyperbolic sine (non-sinh) I-V characteristic at low V/sub DS/ and an activation energy which is not simply decreasing monotonically with increasing V/sub DS/. These phenomena are not explained by conventional poly-Si resistor models. To describe these characteristics, a self-consistent model which includes the effects of a reverse-biased diode at the drain end is presented. Numerical simulation results show excellent agreement with experiment in regard to the shape of the I-V characteristic and of the effective activation energy as a function of V/sub DS/.<>