Title :
Numerical method of investigation for m.o.s.t. structures
Author_Institution :
CEA-Centre d´Ã\x89tudes de Bruyÿres-le-Châtel, Montrouge, France
Abstract :
A numerical method of investigation for m.o.s. structures, which includes the complete system of equations governing the device, is presented with some results for a particular m.o.s. transistor.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700510
