Title :
Resistivity of Graphene Nanoribbon Interconnects
Author :
Murali, Raghunath ; Brenner, Kevin ; Yang, Yinxiao ; Beck, Thomas ; Meindl, James D.
Author_Institution :
Nanotechnol. Res. Center, Georgia Inst. of Technol., Atlanta, GA
fDate :
6/1/2009 12:00:00 AM
Abstract :
Graphene nanoribbon (GNR) interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given linewidth(18 nm < W< 52 nm) is about three times that of a Cu wire, whereas the best GNR has a resistivity that is comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as line-edge roughness scattering; as a result, the best reported GNR resistivity is three times the limit imposed by substrate phonon scattering. This letter reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
Keywords :
electrical resistivity; graphene; impurity scattering; integrated circuit interconnections; nanowires; Cu; conductivity; extracted resistivity; graphene nanoribbon interconnects; graphene nanowires; impurity scattering; line-edge roughness scattering; on-chip interconnects; substrate phonon scattering; Ballistic transport; CMOS technology; Conductivity; Electrical resistance measurement; Nanowires; Performance evaluation; Plasma measurements; Scattering; Silicon; Substrates; Graphene; nanoribbon; resistivity;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2020182