• DocumentCode
    911425
  • Title

    Electrical Properties of \\hbox {Bi}_{5}\\hbox {Nb}_{3} \\hbox {O}_{15} Thin Film Grown on \\hbox {TiN}/</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Cho, Kyung-Hoon ; Seong, Tae-Geun ; Choi, Joo-Young ; Kim, Jin-Seong ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok-Jin ; Kim, Jong-Hee</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>30</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2009</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6/1/2009 12:00:00 AM</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>614</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>616</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Buckling was observed in Bi<sub>5</sub>Nb<sub>3</sub>O<sub>15</sub> (BiNbO) films grown on TiN/SiO<sub>2</sub>/Si at 300°C but not in films grown at room temperature and annealed at 350 °C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/¿m<sup>2</sup> and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm<sup>2</sup> at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V<sup>2</sup> and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO<sub>2</sub>/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MIM devices; bismuth compounds; silicon compounds; thin film capacitors; titanium compounds; Bi<sub>5</sub>Nb<sub>3</sub>O<sub>15</sub>; TiN-SiO<sub>2</sub>-Si; frequency 100 kHz; metal-insulator-metal capacitors; size 45 nm; temperature 293 K to 298 K; temperature 300 degC; temperature 350 degC; thin film; voltage 2 V; Annealing; Bismuth; Capacitance; Leakage current; Niobium; Semiconductor films; Substrates; Temperature; Tin; Voltage; <formula formulatype=$hbox{Bi}_{5}hbox{Nb}_{3}hbox{O}_{15}$; high-$k$; metal–insulator–metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC);

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2020441
  • Filename
    4968007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911425