مرکز منطقه ای اطلاع رساني علوم و فناوري - Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/18972.gif" alt="\\hbox {Bi}_{5}\\hbox {Nb}_{3} \\hbox {O}_{15}"> </formula> Thin Film Grown on <formula formulatype="inline"> <img src="/images/tex/18973.gif" alt="\\hbox {TiN}/

Title :

Electrical Properties of $\\hbox {Bi}_{5}\\hbox {Nb}_{3} \\hbox {O}_{15}$ Thin Film Grown on $\\hbox {TiN}/</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Cho, Kyung-Hoon ; Seong, Tae-Geun ; Choi, Joo-Young ; Kim, Jin-Seong ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok-Jin ; Kim, Jong-Hee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>30</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2009</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6/1/2009 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>614</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>616</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Buckling was observed in Bi<sub>5</sub>Nb<sub>3</sub>O<sub>15</sub> (BiNbO) films grown on TiN/SiO<sub>2</sub>/Si at 300Â°C but not in films grown at room temperature and annealed at 350 Â°C. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/Â¿m<sup>2</sup> and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm<sup>2</sup> at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V<sup>2</sup> and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/Â°C at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO<sub>2</sub>/Si substrate is a good candidate material for high-performance metal-insulator-metal capacitors.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MIM devices; bismuth compounds; silicon compounds; thin film capacitors; titanium compounds; Bi<sub>5</sub>Nb<sub>3</sub>O<sub>15</sub>; TiN-SiO<sub>2</sub>-Si; frequency 100 kHz; metal-insulator-metal capacitors; size 45 nm; temperature 293 K to 298 K; temperature 300 degC; temperature 350 degC; thin film; voltage 2 V; Annealing; Bismuth; Capacitance; Leakage current; Niobium; Semiconductor films; Substrates; Temperature; Tin; Voltage; <formula formulatype=$ $hbox{Bi}_{5}hbox{Nb}_{3}hbox{O}_{15}$; high-$k$; metal–insulator–metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC);