Analysis and understanding of GaAs MESFET behaviour in power amplification

Author

Crosnier, Y. ; Gerard, H. ; Salmer, G.

Author_Institution

UniversitÃ© des Sciences et Techniques de Lille-Flandres-Artois, Centre HyperfrÃ©quences et Semiconducteurs, LA CNRS 287, Villeneuve d´´Ascq, France

Volume

134

Issue

1

fYear

1987

fDate

2/1/1987 12:00:00 AM

Firstpage

7

Abstract

The paper provides new understanding and analysis of the behaviour of GaAs MESFETs under large signal conditions. It uses an experimental study carried out on an active load bench of the Takayama type with devices made by various methods and a numerical dynamic simulation based on a completely physical description taking into account the nonstationary electronic dynamics, the 2-dimensional effects and the breakdown phenomenon. It gives results for the locus of the load diagram in the FET I/V characteristics and of the FET output impedance in matching conditions, against the power level and the bias conditions. Finally, correlations between gain, efficiency, output power and specifications of the FET are shown and general design rules are given.

Keywords

III-V semiconductors; Schottky gate field effect transistors; amplification; gallium arsenide; semiconductor device models; 2-dimensional effects; GaAs; I/V characteristics; III-V semiconductors; MESFET; Takayama type; active load bench; bias conditions; breakdown phenomenon; design rules; dynamic model; efficiency; gain; large signal conditions; matching conditions; nonstationary electronic dynamics; numerical dynamic simulation; output impedance; output power; power amplification; power level; specifications;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1987.0002

Filename

4644275