Title :
Analysis and understanding of GaAs MESFET behaviour in power amplification
Author :
Crosnier, Y. ; Gerard, H. ; Salmer, G.
Author_Institution :
Université des Sciences et Techniques de Lille-Flandres-Artois, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´´Ascq, France
fDate :
2/1/1987 12:00:00 AM
Abstract :
The paper provides new understanding and analysis of the behaviour of GaAs MESFETs under large signal conditions. It uses an experimental study carried out on an active load bench of the Takayama type with devices made by various methods and a numerical dynamic simulation based on a completely physical description taking into account the nonstationary electronic dynamics, the 2-dimensional effects and the breakdown phenomenon. It gives results for the locus of the load diagram in the FET I/V characteristics and of the FET output impedance in matching conditions, against the power level and the bias conditions. Finally, correlations between gain, efficiency, output power and specifications of the FET are shown and general design rules are given.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; amplification; gallium arsenide; semiconductor device models; 2-dimensional effects; GaAs; I/V characteristics; III-V semiconductors; MESFET; Takayama type; active load bench; bias conditions; breakdown phenomenon; design rules; dynamic model; efficiency; gain; large signal conditions; matching conditions; nonstationary electronic dynamics; numerical dynamic simulation; output impedance; output power; power amplification; power level; specifications;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0002
