Title :
Annealing behaviour of proton-irradiated m.o.s. capacitors
Author :
Card, H.C. ; Kao, K.C.
Author_Institution :
University of Manitoba, Department of Electrical Engineering, Winnipeg, Canada
Abstract :
Radiation-induced charges in m.o.s. capacitors irradiated by protons can be effectively annealed out at a temperature of 300°C. An activation-energy analysis of the isochronal annealing results shows that the potential barrier created by the radiation-induced space charges in the oxide layer has an energy distribution ranging from 0.5 to 1.1 eV above the conduction band edge of silicon.
Keywords :
annealing; capacitors; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; proton effects; space charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700518
