DocumentCode
911531
Title
Alpha particle induced soft errors in NMOS RAMS: a review
Author
Carter, P.M. ; Wilkins, B.R.
Author_Institution
University of Southampton, Department of Electronics and Computer Science, Southampton, UK
Volume
134
Issue
1
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
32
Lastpage
44
Abstract
The paper aims to explain the alpha particle induced soft error phenomenon using the NMOS dynamic random access memory (RAM) as a model. It discusses some of the many techniques experimented with by manufacturers to overcome the problem, and gives a review of the literature covering most aspects of soft errors in dynamic RAMs. Finally, the soft error performance of current dynamic RAM and static RAM products from several manufacturers are compared.
Keywords
alpha-particle effects; errors; field effect integrated circuits; integrated memory circuits; random-access storage; reviews; DRAM; NMOS RAMs; alpha particle induced soft error; dynamic random access memory; review;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1987.0005
Filename
4644286
Link To Document