DocumentCode :
911583
Title :
Transition from gain guiding to index guiding and characterisation of 1.55 ¿m bridge-contacted ridge-waveguide lasers
Author :
Hartl, E. ; Müller, G.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Volume :
134
Issue :
1
fYear :
1987
fDate :
2/1/1987 12:00:00 AM
Firstpage :
22
Lastpage :
26
Abstract :
The bridge-contacted ridge-waveguide (BCRW) laser structure is used to investigate the influence of the lateral refractive-index step ¿neff on lasing characteristics at 1.55 ¿m wavelength. For this purpose the dependence of ¿neff on the device parameters is numerically calculated by solving the slab-waveguide problem for the guiding region. It is proved that lateral refractive-index steps up to 10¿1 can be obtained with the BCRW structure and result in strongly index-guided lasers even for small stripe widths. These BCRW lasers show low CW-threshold currents of 33 mA and quantum efficiencies of 29%. A maximum quantum efficiency of 45% is obtained for ¿neff $ 8 × 10¿3 at which the applied index step just compensates carrier-induced antiguiding. It is demonstrated that BCRW lasers can be operated in a stable longitudinal single mode at a side-mode suppression exceeding 20 dB.
Keywords :
laser transitions; optical waveguides; refractive index; semiconductor junction lasers; 1.55 micron; 33 mA; InGaAsP; bridge-contacted ridge-waveguide lasers; carrier-induced antiguiding; device parameters; gain guiding; guiding region; index guiding; lasing characteristics; lateral refractive-index step; lateral refractive-index steps; low CW-threshold currents; semiconductor lasers; side-mode suppression; slab-waveguide problem; small stripe widths; stable longitudinal single mode;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j:19870006
Filename :
4644292
Link To Document :
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