Title :
Travelling-wave amplifier using thin epitaxial GaAs layer
Author :
Dean, Robert H. ; Dreeben, A.B. ; Kaminski, J.F. ; Triano, Alex
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
A solid-state travelling-wave amplifier has been fabricated in 1 ¿m n type epitaxial GaAs on a semi-insulating substrate. It shows a net gain around 5, 7.5, 9 and 11.5 GHz, with a maximum value of 13 dB at 11.5 GHz. Other features include c.w. operation, 20¿30 dB isolation, and voltage-controlled phase shifting with constant gain.
Keywords :
microwave amplifiers; semiconductor thin films; space charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700537
