DocumentCode :
911672
Title :
Optical bistability in semiconductor injection lasers
Author :
McLnerney, J.G. ; Heffernan, D.M. ; Heffernan, D.M.
Author_Institution :
University of New Mexico, Center for High Technology Materials, Albuquerque, USA
Volume :
134
Issue :
1
fYear :
1987
fDate :
2/1/1987 12:00:00 AM
Firstpage :
41
Lastpage :
50
Abstract :
This paper reviews optical bistability in semiconductor lasers, with particular reference to the potential switching speeds of the systems demonstrated to date. Devices which switch by redistributing a nearly constant number of carriers within the active region should be faster, although less stable, than systems whose transitions are attended by large changes in carrier numbers. One system of the former type, the self-focused coupled cavity laser, is analysed in some detail and is compared with the twin-stripe laser and the Fabry-Perot laser amplifier.
Keywords :
laser cavity resonators; optical bistability; reviews; semiconductor junction lasers; active region; carrier numbers; self-focused coupled cavity laser; semiconductor injection lasers; switching speeds;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1987.0009
Filename :
4644302
Link To Document :
بازگشت