Title :
Radiation Hardness and Annealing Tests of a Custom VLSI Device
Author :
Breakstone, Alan ; Parker, Sherwood ; Adolphsen, Chris ; Litke, Alan ; Schwarz, Andreas ; Turala, Michal ; Lüth, Vera
Author_Institution :
University of Hawaii, Honolulu, HI 96822
Abstract :
Several NMOS custom VLSI ("Microplex") circuits have been irradiated with a 500 rad/hr 60Co source. With power off three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200°C was only partially successful in restoring the chips to useful operating conditions.
Keywords :
Annealing; Circuit testing; Detectors; Linear accelerators; MOS devices; Silicon; Strips; Temperature; Very large scale integration; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337391
