Title :
A capacitance mapping technique for investigation of localized recombination-generation sites in Si-SiO2interfaces
Author :
Goetzberger, A. ; Klausmann, E.
fDate :
5/1/1970 12:00:00 AM
Abstract :
Current generation sources in Si-SiO2interfaces are studied by capacitance mapping. For this purpose, a nonequilibrium steady-state condition is created by applying an ac pump signal to one of many test capacitors on an oxide island.
Keywords :
Capacitance measurement; Circuits; Frequency; MOS capacitors; Probes; Radiative recombination; Silicon; Steady-state; Surface discharges; Symmetric matrices;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7743
