Title :
Polarisable dielectrics for m.o.s.t.s
Author :
Alexander, J.H. ; Chittick, R.C. ; Drake, C.F. ; Scanlan, I.F.
Author_Institution :
Standard Telecommunications Laboratories Ltd., Harlow, UK
Abstract :
The use of a new and polarisable dielectric layer has made it possible to obtain large threshold-voltage shifts in m.o.s. capacitors.
Keywords :
dielectric properties of solids; dielectric properties of substances; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19700560
