Title :
Perturbational solutions of the boltzmann transport equation for n+ nn+ structures
Author_Institution :
Naval Research Laboratory, Electronics Technology Division, Washington, USA
fDate :
6/1/1987 12:00:00 AM
Abstract :
A perturbational, moments-of-the-Boltzmann-equation approach (PMBE) is used to obtain the impedance Z and propagation constant k of n+nn+ diode structures in an analytical fashion. Evaluation of Z and k is relatively inexpensive so that hundreds of distinct boundary conditions (BC), corresponding to a single set of interior device parameters, may be studied. Based on such PMBE analytically obtained BC results, a few of the more interesting BC cases could be simulated enlisting a large signal, time domain, spatially varying numerical code. An example of a PMBE computer run is provided for a 0.4 ¿m thick device with a donor doping density of 1015/cm3 in the 100¿300 GHz frequency spectrum.
Keywords :
Boltzmann equation; perturbation theory; semiconductor device models; semiconductor diodes; 0.4 micron; 100 to 300 GHz; Boltzmann transport equation; PMBE computer run; diode structures; distinct boundary conditions; impedance; n+ n n+ structures; propagation constant; spatially varying numerical code;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1987.0017
