• DocumentCode
    911904
  • Title

    Model for programming window degradation in FLOTOX EEPROM cells

  • Author

    Papadas, C. ; Ghibaudo, Gerard ; Pananakakis, G. ; Riva, C. ; Ghezzi, P.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., Grenoble, France
  • Volume
    13
  • Issue
    2
  • fYear
    1992
  • Firstpage
    89
  • Lastpage
    91
  • Abstract
    A theoretical model that explains the programming window degradation and the corresponding high- and low-state threshold voltage shifts as a function of the number of write-erase operations in FLOTOX EEPROM cells is proposed. The collapse of the programming window is quantitatively related to the oxide charge buildup in the FLOTOX tunnel region as the cycling of the memory cell is increased. The simplicity of the model should make possible a direct application at CAD level.<>
  • Keywords
    EPROM; PLD programming; equivalent circuits; integrated memory circuits; semiconductor device models; CAD application; EEPROM cells; FLOTOX; memory cell cycling; oxide charge buildup; programming window degradation; theoretical model; threshold voltage shifts; tunnel region; write-erase operations; Capacitance; Capacitors; Degradation; EPROM; Electrodes; Equivalent circuits; Functional programming; Nonvolatile memory; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.144968
  • Filename
    144968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911904