Title :
Effects of Zn doping on modulation bandwidth of 1.55 mu m InGaAs/InGaAsP multiquantum well DFB lasers
Author :
Lealman, I.F. ; Perrin, S.D.
Author_Institution :
BT Labs., Ipswich, UK
fDate :
6/24/1993 12:00:00 AM
Abstract :
Experimental results are presented that confirm that Zn doping the active region of multiquantum well DFB lasers enhances their modulation bandwidth. This is achieved by reducing both the damping and low frequency rolloff associated with carrier transport. A maximum CW bandwidth of 17 GHz at 20 degrees C is reported.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor doping; semiconductor lasers; zinc; 1.55 micron; 17 GHz; 20 degC; InGaAs-InGaAsP:Zn; InP substrate; Zn doping; active region; damping; low frequency rolloff; maximum CW bandwidth; modulation bandwidth; multiquantum well DFB lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930800
