Title :
Long-term charge storage in GaP pn junction capacitors
Author :
Wang, Yannan ; Ramdani, J. ; He, Yuhong ; Bedair, S.M. ; Melloch, M.R.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
fDate :
6/24/1993 12:00:00 AM
Abstract :
pn junction storage capacitors are fabricated in GaP grown by gas source MBE. Storage times are thermally activated with activation energies between 1.10 and 1.38 eV. At 125 degrees C, the GaP recovery times are approximately 50 times longer than the best GaAs devices.
Keywords :
III-V semiconductors; capacitors; gallium compounds; molecular beam epitaxial growth; p-n homojunctions; semiconductor devices; semiconductor storage; 125 degC; GaP; activation energies; gas source MBE; long-term charge storage; memory cells; n-p-n type; p-n-p type; pn junction capacitors; recovery times; storage capacitors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930772
