Title :
Substrate Current Modeling for Circuit Simulation
Author :
Mar, Jerry ; Li, Sheau-Suey ; Yu, Swei-Yam
Author_Institution :
Intel Corporation, Santa Clara, CA, USA
fDate :
10/1/1982 12:00:00 AM
Abstract :
A new circuit simulation model is presented for impact ionization generated MOSFET substrate current. The model uses four parameters to accurately model substrate current over a wide range of device dimensions and operating voltages, including operation in the linear region. The model is able to model substrate currents from both heavily doped and lightly doped devices.
Keywords :
Circuit simulation; DC generators; Design automation; Doping; Equations; Impact ionization; MOSFET circuits; Predictive models; Very large scale integration; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1982.1270009
