• DocumentCode
    911983
  • Title

    Substrate Current Modeling for Circuit Simulation

  • Author

    Mar, Jerry ; Li, Sheau-Suey ; Yu, Swei-Yam

  • Author_Institution
    Intel Corporation, Santa Clara, CA, USA
  • Volume
    1
  • Issue
    4
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    183
  • Lastpage
    186
  • Abstract
    A new circuit simulation model is presented for impact ionization generated MOSFET substrate current. The model uses four parameters to accurately model substrate current over a wide range of device dimensions and operating voltages, including operation in the linear region. The model is able to model substrate currents from both heavily doped and lightly doped devices.
  • Keywords
    Circuit simulation; DC generators; Design automation; Doping; Equations; Impact ionization; MOSFET circuits; Predictive models; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1982.1270009
  • Filename
    1270009
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=911983